Electronics engineering semester 3 syllabus


Electronics engineering semester 3 syllabus

Applied
Mathematics III
Laplace Transform 12
1.1 Laplace transform (LT) of standard functions: Definition.
Unilateral and bilateral Laplace transform, LT of sin(at), cos(at),
eat ,tn , sinh(at), cosh(at), erf(t), Heavi-side unit step, direct- delta
function, LT of periodic function
1.2 Properties of Laplace transform: linearity, first shifting theorem,
second shifting theorem, multiplication by t n , division by t ,
Laplace transform derivatives and integrals, change of scale,
convolution theorem, initial and final value theorem, Parsevel’s
identity
1.3 Inverse Laplace Transform: Partial fraction method, long division
method, residue method, theorem of LT to find inverse
1.4 Applications of Laplace transform : Solution of ordinary
differential equations
2.0 Fourier Series 10
2.1 Introduction: Definition, Dirichlet’s conditions, Euler’s formulae
2.2 Fourier series of functions: exponential, trigonometric functions,
even and odd functions, half range sine and cosine series
2.3 Complex form of Fourier series, Fourier integral representation
3.0 Bessel functions 08
3.1 Solution of Bessel differential equation: series method, recurrence
relation, properties of Bessel Function of order +1/2 and -1/2
3.2 Generating function, orthogonality property
3.3 Bessel Fourier series of a functions
4.0 Vector Algebra 12
4.1 Scalar and vector product: Scalar and vector product of three and
four vectors and their properties
4.2 Vector differentiation : Gradient of scalar point function, divergence
and curl of vector pint function
4.3 Properties: Solenoidal and Irrotational vector fields, conservative
vector field
4.4 Vector integral: Line integral, Green’s theorem in a plane, Gauss
Divergence theorem, Stokes’ theoremComplex Variable 10
5.1 Analytic function: Necessary and sufficient conditions, Cauchy
Reiman. equations in polar form
5.2 Harmonic function, orthogonal trajectories
5.3 Mapping: Conformal mapping, bilinear transformations, cross ratio,
fixed points, bilinear transformation of straight lines and circles.
Recommended Books
1. P. N. Wartikar and J. N. Wartikar, “A Text Book of Applied Mathematic”, Vol. I & II, Vidyarthi
Griha Prakashan, Pune
2. A Datta, “Mathematical Methods in Science and Engineerin”, 2012
3. Dr. B.S. Grewal, “Higher Engineering Mathematics”, Khanna Publication
4. B. S. Tyagi, “Functions of a Complex Variable,” Kedarnath Ram Nath Publication
5. B V Ramana, “Higher Engineering Mathematics”, Tata McGraw-Hill Publication
6. Wylie and Barret, “Advanced Engineering Mathematics”, McGraw-Hill 6th Edition
7. Erwin Kreysizg, “Advanced Engineering Mathematics”, John Wiley & Sons, Inc
8. Murry R. Spieget, “Vector Analysis”, Schaun’s Out Line Series, McGraw Hill Publication
Internal Assessment (IA):
Two tests must be conducted which should cover 80% of syllabus. The average marks of two tests will be
considered as final IA marks
End Semester Examination:
1. Question paper will comprise of 6 questions, each carrying 20 marks.
2. The students need to solve total 4 questions.
3: Question No.1 will be compulsory and based on entire syllabus.
4: Remaining questions (Q.2 to Q.6) will be set on all the modules.
5: Weight age of marks will be as per Blueprint.
Term Work:
At least 08 assignments covering entire syllabus must be given during the Class Wise Tutorial. The
assignments should be students’ centric and an attempt should be made to make assignments more
meaningful, interesting and innovative. Term work assessment must be based on the overall performance
of the student with every assignment graded from time to time. The grades should be converted into
marks as per the Credit and Grading System manual and should be added and averaged. The grading and
term work assessment should be done based on this scheme.
Electronic Devices
Junction Analysis 14
1.1 PN junction Diode: Basic Structure, Energy Band Diagrams, Zero Applied Bias, Forward
Applied Bias, Reverse Applied Bias, PN Junction current, Small signal model of PN
junction, Generation and recombination of currents, junction breakdown.
Zener Diode: Breakdown mechanisms, Characteristics, Effect of Temperature,
Application as voltage regulator and backward diode
Varactor diode: Working and characteristics
Tunnel diode: V-I Characteristics and working
TED (Transferred Electron Device): Basic concept, Negative differential resistance, V-I
Characteristics and working of Gunn Diode
IMPATT: Static and Dynamic Characteristics
1.2 Metal semiconductor and semiconductor Heterojunctions:
Schottkey barrier diode: Qualitative characteristics, Ideal junction properties, Nonideal
effects on barrier height and V-I characteristics
Metal-semiconductor ohmic contacts: Ideal Non rectifying barriers, Tunneling Barrier,
Specific contact resistance
Heterojunctions: Heterojunction materials, Energy Band Diagrams, Two dimensional
electron gas.
2 Bipolar Devices 08
2.1 BJT: The bipolar transistor action, minority carrier distribution, low-frequency commonbase
current gain, non-ideal effects, Ebers-Moll Model, Gummel-Poon Model, Hybrid-Pi
Model, Frequency Limitations
2.2 HBT (Heterojunction bipolar transistor): Current gain in HBT, Basic n-p-n HBT structure
with band diagram
3.0 Field Effect Devices 16
3.1 JFET: Construction, operation and device characteristics. V-I relationship and
transconductance. Small signal equivalent model, frequency limitation factors and cutoff
frequency
3.2 MOSFET:Two terminal MOS structure, MOSFET construction, Band diagrams under
equilibrium and external bias, Threshold Voltage, V-I and CV characteristics, Channel
length modulation, Short Channel effects, MOSFET Model
3.3 MESFET: Device structure, principle of operation, V-I characteristics, High frequency
performanceMODFET (i.e HEMT) : Fundamentals, V-I Characteristics, Cutoff Frequency
4.0 Optical Devices 06
4.1 Optical absorption: Photon absorption coefficient, EHP generation rate
Solar Cells: The pn junction, heterojunction and amorphous silicon solar cells
4.2 Photodetectors: Photoconductor, photodiode, PIN photodiode, APD (avalanche
photodiode), phototransistor
Optocouplers: Operation, construction, specifications and applications
5.0 Power Devices 08
5.1 PNPN Diode: Basic structure and characteristics
SCR: Basic structure, characteristics, Two transistor analogy.
DIAC and TRIAC: Basic Structure and characteristics
5.2 GTO: Basic structure and characteristics
PUT: Operation and characteristics
UJT: Operation, characteristics, parameters and UJT as a relaxation oscillator
IGBT: Device structure, equivalent circuit and characteristics
Recommended Books:
1. Donald A. Neamen, “Semiconductor Physics and Devices” Tata MCGraw Hill, Third Edition
2. S. M. Sze, “Semiconductor Devices: Physics and Technology”, Wiley, Second Edition
3. Sung-Mo Kang,Yusuf Leblebici, “CMOS Digital Integrated Circuits”, Tata McGraw Hill, Third Edition
4. David Bell, “Electronic Devices and Circuits”, Oxford, Fifth Edition.
5. S Slivahanan and N. Suresh Kumar, “Electronic Devices and Circuits”, McGraw Hill, Third Edition
6. Gordon W. Roberts and Adel S. Sedra, “Spice”, Oxford, Second Edition
Internal Assessment (IA):
Two tests must be conducted which should cover at least 80% of syllabus. The average marks of both the
test will be considered as final IA marks
End Semester Examination:
1. Question paper will comprise of 6 questions, each carrying 20 marks.
2. The students need to solve total 4 questions.
3: Question No.1 will be compulsory and based on entire syllabus.
4: Remaining question (Q.2 to Q.6) will be set from all the modules.
5: Weightage of marks will be as per Blueprint.
Digital Circuits and
Design
Fundamentals of Digital Design 14
1.1 Logic Gates: Review of basic gates, Universal gates, Sum of products and products
of sum, minimization with Karnaugh Map (upto four variables) and realization.
1.2 Logic Families: Types of logic families (TTL and CMOS), characteristic parameters
(propagation delays, power dissipation, Noise Margin, Fan-out and Fan-in), transfer
characteristics of TTL NAND, Interfacing CMOS to TTL and TTL to CMOS.
1.3 Combinational Circuits using basic gates as well as MSI devices: Half adder, Full
adder, Half Subtractor, Full Subtractor, multiplexer, demultiplexer, decoder,
Comparator (Multiplexer and demultiplexer gate level upto 4:1).
MSI devices IC7483, IC74151, IC74138, IC7485.
2.0 Elements of Sequential Logic Design : 10
2.1 Sequential Logic: Latches and Flip-Flops (Conversions, timing considerations and
metastability are not expected)
2.2 Counters: Asynchronous, Synchronous Counters, Up Down Counters, Mod
Counters, Ring Counters Shift Registers, Universal Shift Register
3.0 Sequential Logic Design: 10
3.1 Mealy and Moore Machines, Clocked synchronous state machine analysis, State
reduction techniques and state assignment, Clocked synchronous state machine
design. (Complex word problems like traffic light controller etc. are not expected)
3.2 MSI counters (7490, 74163, 74169) and applications, MSI Shift registers (74194) and
their applications
4.0 Programmable Logic Devices: 07
4.1 Concepts of PAL and PLA. Simple logic implementation using PAL and PLA.
Introduction to CPLD and FPGA architectures.
5.0 Simulation: 07
5.1 Functional Simulation, Timing simulation, Logic Synthesis, RTL
5.2 Introduction to VHDL, Framework of VHDL Program.
6.0 Testability: 06
6.1 Fault Models, Stuck at faults, Bridging faults, Controllability and Observability
6.2 Path sensitization, ATPG, Design for Testability, Boundary Scan Logic, JTAG and
Built in self test.
Recommended Books
1. William I. Fletcher, ‘An Engineering Approach to Digital Design’, PHI.
2. B. Holdsworth and R. C. Woods, ‘Digital Logic Design’, Newnes, 4th Edition
3. Morris Mano, Digital Design, Pearson Education, Asia 2002.
4. John F. Wakerley, Digital Design Principles And Practices, third Edition Updated, Pearson
Education, Singapore, 2002
5. Anil K. Maini, Digital Electronics, Principles, Devices and Applications, Wiley
6. Stephen Brown and Zvonko Vranesic, Fundamentals of digital logic design with VHDL,
McGraw Hill, 2nd Edition.
Internal Assessment (IA):
Two tests must be conducted which should cover at least 80% of syllabus. The average marks of both the
test will be considered as final IA marks
End Semester Examination:
1. Question paper will comprise of 6 questions, each carrying 20 marks.
2. The students need to solve total 4 questions.
3: Question No.1 will be compulsory and based on entire syllabus.
4: Remaining question (Q.2 to Q.6) will be set from all the modules.
5: Weightage of marks will be as per Blueprint
CircuitTheory
Analysis of Electrical Circuits 09
1.1 Analysis of DC circuits: Analysis of circuits with and without controlled sources using
generalized loop, node matrix, Superposition, Thevenin, Norton, Millman theorems
1.2 Analysis of coupled circuits: Self and mutual inductances, coefficient of coupling, Dot
convention, equivalent circuit, solution using loop analysis
1.3 Series and parallel resonance circuits: Selectivity, bandwidth, quality factor
2.0 Time and Frequency Domain Analysis 12
2.1 Time domain analysis of R-L and R-C circuits: Forced and natural response, time
constant, initial and final values
Solution using first order equation for standard input signals: Transient and steady
state time response, solution using universal formula
2.2 Time domain analysis of R-L-C circuits: Forced and natural response, effect of
damping
Solution using second order equation for standard input signals: Transient and steady
state time response
2.3 Frequency domain analysis of RLC circuits: S-domain representation, applications of
Laplace Transform in solving electrical networks, driving point and transfer function,
Poles and Zeros, calculation of residues by analytical and graphical method, frequency
response
3.0 Synthesis of RLC Circuits
3.1 Positive real functions: Concept of positive real function, testing for Hurwitz
polynomials, testing for necessary and sufficient conditions for positive real functions
3.2 Synthesis of RC, RL, LC circuits: Concepts of synthesis of RC, RL, LC driving point
functions (numerical problems not expected on 3.2)
4.0 Two Port Networks
4.1 Parameters: Open Circuit, Short Circuit, Transmission and Hybrid parameters,
relationships among parameters, reciprocity and symmetry conditions
4.2 Series/parallel connection: T and Pi representations, interconnection of Two-Port
networks,
5.0 Flirters and attenuators
5.1 Basic filter circuits: Low pass, high pass, band pass and band stop filters, transfer
function, frequency response, cutoff frequency, bandwidth, quality factor, attenuation
constant, phase shift, characteristic impedance
5.2 Concept of design and analysis of filters: Constant K, M derived and composite filters
(numerical problems not expected on 5.2)
5.3 Attenuators: Basic concepts, classification, attenuation in dB, K factor (impedance
factor) and design concepts (numerical problems not expected on 5.3)
6.0 Transmission Lines
6.1 Power frequency lines: Representation, losses and efficiency in power lines, effect of
length, calculation of inductance and capacitance (numerical problems not expected)
6.2 Radio frequency lines: Representation, propagation constant, attenuation constant, phase
constant, group velocity, input impedance, characteristic impedance, reflection coefficient, standing wave ratio, VSWR, ISWR, S-parameters
6.3 Smith Chart: Impedance locus diagram, impedance matching
Recommended Books:
1. Franklin F Kuo, “Network Analysis and Synthesis”, Wiley Toppan,
2. M E Van Valkenburg, “Network Analysis”, Prentice-Hall of India Pvt Ltd, New Delhi
3. K V V Murty and M S Kamth, “Basic Circuit Analysis”, Jaico Publishing house, London
4. A. Chakrabarti, “Circuit Theory”, Dhanpat Rai and Co.,New Delhi
5. Reinhold Ludwig and Pavel Bretchko, “RF Circuit Design”, Pearson Education, Asia
6. Joseph J. Carr, “Secrets of RF Circuit Design”, Tata McGraw-Hill, New Delhi
Internal Assessment (IA):
Two tests must be conducted which should cover at least 80% of syllabus. The average marks of both the
test will be considered as final IA marks
End Semester Examination:
1. Question paper will comprise of 6 questions, each carrying 20 marks.
2. The students need to solve total 4 questions.
3: Question No.1 will be compulsory and based on entire syllabus.
4: Remaining question (Q.2 to Q.6) will be set from all the modules.
5: Weightage of marks will be as per Blueprint.
Electronic Instruments and Measurements
Principles of Measurement 06
1.1 Introduction to Basic Instruments: Components of Generalized measurement
system, applications of instrument systems, static and dynamic characteristics of
instruments, Concepts of Accuracy, Precision, Linearity, Sensitivity, Resolution,
Hysteresis, Calibration etc.
1.2 Errors in Measurement: Errors in Measurement, Classification of Errors, Remedies
to Eliminate/Reduce Errors.
2 Test and Measuring Instruments 10
2.1 Analog Multi-meters: Multi-range, Multi-parameter Measurement, Electronics
Voltmeter using Transistors, FETs and Opamps. Specifications of a multi-meter.
2.2 RLC and Q-meter: Measurement of Low, Medium and High Resistance using
Wheatstone bridge, Kelvin’s Double Bridge and Mega ohm Bridge; Measurement of
Inductance using Maxwell Bridge and Hey Bridge; Measurement of Capacitance using
Schering Bridge; Operating Principle and Applications of Q-Meter.
2.3 Digital Multi-meters: DMM; Automation, Auto Ranging and Auto Zero Adjustments
in Digital Instruments.
3 Oscilloscopes 10
3.1 Cathode Ray Oscilloscope: Block Diagram based Study of CRO, Specifications,
Controls, Sweep Modes, Role of Delay Line, Single- and Dual-Beam Dual-Trace CROs,
Chop and Alternate Modes.
3.2 Measurement using Oscilloscope: Measurement of Voltage, Frequency, Rise Time,
Fall Time and Phase Difference. Lissajous Figures in Detection of Frequency and Phase.
3.3 Digital Storage Oscilloscope (DSO): Features like Roll, Refresh, Storage Mode and
Sampling Rate; Applications of DSO.
4 Transducers for Displacement and Temperature Measurement 08
4.1 Basics of Transducers/Sensors : Characteristics of Transducers; Requirement of
Transducers; Classification of transducers; Selection Criteria of Transducers.
4.2 Displacement: Potentiometers; Linear Variable Differential Transformer, Resistance
Strain Gauges, Capacitance Sensors.
4.3 Temperature: RTD, Thermisters, Thermocouples- Their Ranges, and Applications.
5 Transducers for Pressure, Level and Flow Measurement 10
5.1 Pressure: Pressure gauges; Elastic Pressure Transducers; Dead Weight Tester;
Vacuum Pressure Measurement- McLeod Gauge and Pirani Gauge.
5.2 Level: Side glass tube method; Float type methods; Capacitance type method;
Ultrasonic type transducer.
5.3 Flow: Restriction type Flow meters-Orifice and Venturi; Rotameter; Magnetic Flow
meter; Turbine Flow meter.
6 Data Acquisition and advances in Instrumentation Systems 08
6.1 Monitoring Instruments : Indicators, Alarm, Recorders.
6.2 Data Acquisition and Converters: Data logger; Data acquisition system (DAS)-Single channel, Multichannel.
6.3 PC based Instrumentation: PC based Instrumentation System; Introduction to
Programmable Logic Controller.
Rcommended Books:
1. H. Oliver and J. M. Cage, Electronic Measurement and Instrumentation, McGraw Hill, 3rd edition.
2. W. Cooper, A. Helfric, Electronic Instrumentation and Measurement Techniques, PHI, 4th edition.
3. C. S. Rangan, G.R. Sarma, V.S.V. Mani, Instrumentation Devices and Systems, Tata McGraw Hill,
9th edition.
4. A. K. Sawhney, Electrical & Electronic Instruments & Measurement, Dhanpat Rai and Sons,
Eleventh ed., 2000.
5. Dally, William F. Riley and Kenneth G, Instrumentation for Engineering Measurements, James John
Wiley and Sons. Inc., 2nd Edition 1993.
6. A.J. Bowens, Digital Instrumentation, McGraw-Hill, latest addition.
7. J.J.Carr, Elements of Electronic Instrumentation and Control, Prentice Hall, 3rd edition.
Internal Assessment (IA):
Two tests must be conducted which should cover at least 80% of syllabus. The average marks of both the
test will be considered as final IA marks
End Semester Examination:
1. Question paper will comprise of 6 questions, each carrying 20 marks.
2. The students need to solve total 4 questions.
3: Question No.1 will be compulsory and based on entire syllabus.
4: Remaining question (Q.2 to Q.6) will be set from all the modules.
5: Weightage of marks will be as per Blueprint.
*Object
Oriented
Programming
Fundamental concepts of object oriented programming 4
1.1 Overview of Programming
1.2 Introduction to the principles of object-oriented programming : Classes,
Objects, Messages, Abstraction, Encapsulation, Inheritance,
Polymorphism, exception handling, and object-oriented containers
1.3 Differences and Similarity between C++ and JAVA
2 Fundamental of Java Programming 4
2.1 Features of Java
2.2 JDK Environment & tools
2.3 Structure of java program
2.4 Keywords , Data types, Variables, Operators, Expressions
2.5 Decision Making, Looping, Type Casting
2.6 Input output using scanner class
3 Classes and Objects 6
3.1 Creating Classes and objects
3.2 Memory allocation for objects
3.3 Passing parameters to Methods
3.4 Returning parameters
3.5 Method overloading
3.6 Constructor and finalize( )
3.7 Arrays : Creating an array
3.8 Types of Array : One Dimensional arrays ,Two Dimensional arrayTypes of Inheritance : Single ,Multilevel, Hierarchical
4.2 Method Overriding, Super keyword, Final Keyword, Abstract Class
4.3 Interface
4.4 Packages
5 Multithreading 4
5.1 Life cycle of thread
5.2 Methods
5.3 Priority in multithreading
6 Applet 2
6.1 Applet Life cycle
6.2 Creating applet
6.3 Applet tag
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